Humbot Simulation 005
Nitronex Corp. (Raleigh, NC) also is known for its GaN work. Back in 2001, the company made
headlines when it announced that it was producing GaNbased high-electron mobility transistors
(HEMTs) on 4-in. rather than 2-in. silicon wafers. The company has continued its GaN developments
ever since. This past March, it released a 50-W, 28-V GaN HEMT that is designed for WiMAX
applications with frequencies from 3.3 to 3.8 GHz. For Vds = 28 V, Idq = 750 mA at a center frequency
of 3.5 GHz. To provide broadband performance, the device offers input-only matching and no output
matching. The PNPT35050 was built using the SIGANTIC GaN-on-Si platform technology.
Next simulation
Nitronex Corp. (Raleigh, NC) also is known for its GaN work. Back in 2001, the company made
headlines when it announced that it was producing GaNbased high-electron mobility transistors
(HEMTs) on 4-in. rather than 2-in. silicon wafers. The company has continued its GaN developments
ever since. This past March, it released a 50-W, 28-V GaN HEMT that is designed for WiMAX
applications with frequencies from 3.3 to 3.8 GHz. For Vds = 28 V, Idq = 750 mA at a center frequency
of 3.5 GHz. To provide broadband performance, the device offers input-only matching and no output
matching. The PNPT35050 was built using the SIGANTIC GaN-on-Si platform technology.
Next simulation
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